A Study on Grinding Parameter Optimization of Reaction Bonded Silicon Carbide

Yao Wang; Zha Yan Feng

doi:10.4028/www.scientific.net/AMR.631-632.660

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 631-632A Study on Grinding Parameter Optimization of...

A Study on Grinding Parameter Optimization of Reaction Bonded Silicon Carbide

Abstract:

In order to enhance the efficiency and the surface smooth degree of the RBSiC grinding, a three factors two levels full factorial design was utilized to optimize the process. Combined with the effects of grinding parameters on surface roughness, the grit cut depth analysis was employed to choose the appropriate grinding parameters. The strength reliability and the residual stresses of the RBSiC ground using the optimized parameters were investigated. The results show that comparing to the polished RBSiC the ground ones have higher compressive residual stress, lower crack scatter and similar average bending strength.

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Periodical:

Advanced Materials Research (Volumes 631-632)

Pages:

660-665

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.631-632.660

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Online since:

January 2013

Authors:

Yao Wang, Zha Yan Feng

Keywords:

Grinding, Grit Cut Depth, Optimization, RBSiC, Strength

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