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Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La0.9Hf0.1MnO3

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Abstract:

Thin films of perovskite manganite La0.9Hf0.1MnO3 (LHMO) have been grown on (100) SrTiO3 single-crystal substrates with different growth pressures by pulsed laser deposition. The different transport behaviors of films have been fitted by various models. The results clearly demonstrate that oxygen pressure is an efficient way to change the transport behaviors of LHMO films. All the transport behaviors observed in LHMO films can be better fitted by Mott’s variable range hopping model than the other two models.

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Periodical:

Advanced Materials Research (Volumes 634-638)

Pages:

2485-2488

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.634-638.2485

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Online since:

January 2013

Authors:

Lin Wang, Zhen Ping Wu, Yu Cheng Jiang, Bing Ren, Jian Huang, Lin Jun Wang, Yi Ben Xia, Ju Gao

Keywords:

Electron-Doped, Manganite, Oxygen Content

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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