Preparation, Characterization of Low Infrared Emissivity Stealth Coating

Xiao Meng Lv; Xiao Li Gou; Huan Chun Wang; Xiang Xuan Liu

doi:10.4028/www.scientific.net/AMR.634-638.2502

Paper Titles

Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La_0.9Hf_0.1MnO₃
p.2485

Manganese K- and L₃-Edge X-Ray Absorption Fine Structure Study of Zn_1-xMn_xTe
p.2489

Photoluminescence and Afterglow Behavior of Eu²⁺, Dy³⁺ and Eu²⁺, Sm³⁺ in Sr₃Al₂O₆ Matrix
p.2493

Photoluminescence Properties of Sulfur-Doped Sr₃SiO₅: Eu²⁺ Phosphor for White LEDs
p.2498

Preparation, Characterization of Low Infrared Emissivity Stealth Coating
p.2502

Strong Perpendicular Magnetic Anisotropy with High Thermal Stability in Annealed Co/Native Oxide/Pd Multilayers
p.2506

The Effect of Oxygen-Rich Condition on Properties of ZnO: In Films by Sputtering
p.2512

Theoretical Studies of the Spin Hamiltonian Parameters for Fe⁰ and Mn^– in Silicon Center
p.2518

The Influence of 4,4’-bis[6-(acryloyloxy)-hexyloxy]biphenyl Contents on the Electro-Optical Properties of Polymer Stabilized Liquid Crystals
p.2523

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 634-638Preparation, Characterization of Low Infrared...

Preparation, Characterization of Low Infrared Emissivity Stealth Coating

Abstract:

Ni-P modified hollow cenosphere was used to prepare infrared stealth coating. Infrared Spectrometer, Scanning Electron Microscope, Infrared Emissivity Testing Device are used to study the performance of the infrared stealth coating. Influencing factors of infrared emissivity of coating are analyzed comprehensively. The lowest emissivity of infrared stealth coating in 8-14um wavebands is 0.63 and the ability of controlling the coating surface temperature is raised.