The Effect of Oxygen-Rich Condition on Properties of ZnO: In Films by Sputtering

Abstract:

Indium doped zinc oxide (ZnO:In) films were prepared in oxygen-rich condition by direct current(DC) reactive magnetron sputtering. The X-ray diffraction(XRD) pattern presented that the crystal quality of ZnO:In films was improved by the introduction of nitrogen into ambience, meanwhile the element constituent was investigated by X-Ray photoelectron spectroscopy(XPS). The photoluminescence(PL) spectra showed the visible emission was originated from two different defects. The current-voltage characteristic and persistent photoconductivity(PPC) phenomena were also explained, when the oxygen vacancies(VO) may act trap centers in persistent photoconductivity.

• Periodical: Advanced Materials Research (Volumes 634-638)
• Pages: 2512-2517
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.634-638.2512
• Online since: January 2013
• Authors: Hui Li, Hai Tao Feng, Fang Hui Zhang, Yun Liu, Er Qing Xie
• Keywords: Defect, Film, Sputtering, Zinc Oxide (ZnO)

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