Effects of Current Stressing and Isothermal Aging on the Tensile Strength of Microscale Lead-Free Solder Joints with Different Joint Volumes

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Abstract:

Adopting an accurate micro-tensile method based on dynamic mechanical analyzer (DMA) instrument, the tensile strength of three kinds of copper-wire/solder/copper-wire sandwich structured microscale lead-free solder joints that underwent current stressing with a direct current density of 1.0×104 A/cm2 and loading time of 48 hours were investigated, and compared with those solder joints isothermal aged at 100 0C for 48 hours and as-reflowed condition. These three kinds of microscale columnar solder joints have different volumes, i.e., a same diameter of 300 μm but different heights of 100 μm, 200 μm and 300 μm. Experimental results show that both current stressing and isothermal aging degrades the tensile strength of microscale solder joints, and the solder joint with smaller volume obtains higher tensile strength under same test condition. In addition, current stressing induces obvious electromigration (EM) issue under high current density of 1.0×104 A/cm2, resulting in the decreasing of tensile strength and different fracture position, mode and surface morphology of microscale solder joints. The degree of strength degradation increases with the increasing of joint height when keep joint diameter constant, this is mainly due to that electromigration leads to voids form and grow at the interface of cathode, and solder joints with larger volume may contains more soldering defects as well.

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Advanced Materials Research (Volumes 634-638)

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2800-2803

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January 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] K.N. Tu: J. Appl. Phys. Vol. 94 (2003), p.5451

Google Scholar

[2] C. Chen and S.W. Liang: J. Mater. Sci.: Mater. Electron. Vol. 18 (2007), p.259

Google Scholar

[3] B.H.L. Chao, X.F. Zhang, S. H. Chae and P.S. Ho: Microelectron. Reliab. Vol. 49(2009), p.253

Google Scholar

[4] J.R. Lloyd: J. Phys. D: Appl. Phys. Vol. 32 (1999), p.109

Google Scholar

[5] F. Ren, J.W. Nah, K.N. Tu, B. Xiong, L. Xu and J.H.L. Pang: Appl. Phys. Lett. Vol. 89 (2006), p.141914

Google Scholar

[6] L. Zhang, Z.G. Wang and J.K. Shang: Scripta Mater. Vol. 56 (2007), p.381

Google Scholar

[7] L.M. Yin and X.P. Zhang: Acta Electron. Sin. Vol. 37 (200), p.253 (In Chinese)

Google Scholar

[8] L.M. Yin, Y. Yang, L.Q. Liu and X.P. Zhang: Acta Metall. Sin. Vol. 45 (2009), p.422 (In Chinese)

Google Scholar

[9] L. M. Yin, X. P. Zhang and C.S. Lu: J. Electron. Mater. Vol. 38 (2009), p.2179

Google Scholar

[10] H. Ye, C. Basaran and D. C. Hopkins: Inter. J. Solids Struct. Vol. 40 (2003), p.7269

Google Scholar

[11] J.H. Lee, G.T. Lim, Y.B. Park, S.T. Yang, M.S. Suh, Q.H. Chung and K.Y. Byun, in: 58th Electronic Components and Technology Conference, Lake Buena Vista, FL, 27-30 May, 2008, p. (2030)

Google Scholar

[12] D.H. Eaton, J.D. Rowatt and W.J. Dauksher, in: IEEE 44th International Reliability Physics Symposium, San Jose, CA, 26-30 March, 2006, p.243

Google Scholar