Characterization of ZnO Thin Films Fabricated by Atomic Layer Deposition with Various Temperatures

Abstract:

Atomic layer deposition (ALD) is utilized to grow high performance zinc oxide (ZnO) thin films, where the effects of ALD process temperature on the thin film properties are also studied in this work. Some major properties of the ALD ZnO films are characterized and compared with those of sputtered ZnO films. Significant differences are observed that the electrical resistances of the ALD ZnO films are largely improved, while the optical transmittances also increase. Nevertheless, the adhesion and mechanical properties of the ALD films are worse than the sputtered films because of the weak bonding in the ALD process. For various substrate temperatures, the ALD ZnO films with 200°C behave the best performance.

• Periodical: Advanced Materials Research (Volume 650)
• Pages: 18-23
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.650.18
• Online since: January 2013
• Authors: Tsai Cheng Li, Rwei Ching Chang, Pei Sin Jhu
• Keywords: Adhesion, Atomic Layer Deposition, Substrate Temperature, Thin Film, Zinc Oxide (ZnO)

References

[1] S.M. George, A.W. Ott, J.W. Klaus, J. Phys. Chem. 100 (1996), p.13121.

[2] T. Suntola, J. Hyvarinen, Annu. Rev. Mater. Sci. 15 (1985), p.177.

[3] H. Kim, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. 2 (2003), p.31.

[4] J.D. Ferguson, A.W. Weimer, S.M. George, Thin Solid Films 371 (2000), p.95.

[5] M. Ritala, M. Leskela, J. Dekker, C. Mutsaers, P.J. Soininen, J. Skarp, Chem. Vap. Deposition 5 (1999), p.7.

DOI: 10.1002/(sici)1521-3862(199901)5:1<7::aid-cvde7>3.0.co;2-j

[6] J.W. Elama, Z.A. Sechrista, S.M. George, Thin Solid Films 414 (2002), p.43.

[7] D. Kim, H. Kang, J.M. Kim, H. Kim, Applied Surface Science 257 (2011), p.3776.

[8] K.C. Park, D.Y. Ma and K.H. Kim, Thin Solid Films 305 (1997), p.201.

[9] R. Cebulla, R. Wendt, and K. Ellmer, J. Appl. Phys. 83 (1998), p.1087.

[10] S. Kuriki, T. Kawashima, Thin Solid Films 515 (2007), p.8594.

[11] W. Yang, Z. Liu, D.L. Peng, F. Zhang, H. Huang, Y. Xie, Z. Wu, Appl. Surf. Sci. 255 (2009), p.5669.

[12] S.Y. Chang, Y.C. Hsiao, Y.C. Huang, Surf. Coat. Technol. 202 (2008), p.5416.

[13] D. Zhu, K. Li, F. Luo, W. Zhou, Appl. Surf. Sci. 255 (2009), p.6145.

[14] C.G. Granqvist and A. Hultaker, Thin Solid Films 411 (2002), p.1.

[15] Y.H. Tak, K.B. Kim, H.G. Park, K.H. Lee and J.R. Lee, Thin Solid Films 411 (2002), p.12.

[16] S.H. Jeong, J.W. Lee, S.B. Lee, J.H. Boo, Thin Solid Films 435 (2003), p.78.

[17] T. Miyata, Y. Honma, T. Minami, J. Vac. Sci. Technol. A 25 (2007), p.1193.

[18] I.C. Noyan, J.B. Cohen, Residual Stress, Measurement by Diffraction and Interpretation, Springer-Verlag, New York (1987).

[19] U. Welzel, J. Ligot, P. Lamparter, A.C. Vermeulen, E.J. Mittemeijer, J. Appl. Crystallogr. 38 (2005), p.1.

[20] T. Pienkos, A. Proszynski, D. Chocyk, L. Gladyszewski, G. Gladyszewski, Microelectronic Engineering 70 (2003), p.42.

DOI: 10.1016/j.mee.2006.10.034

[21] M. Bai, K. Kato, N. Umehara, Y. Miyake, Thin Solid Films 377-378 (2000), p.138.

[22] G.G. Stoney, Proc. R. Soc. Lond. A82 (1909), p.172.

[23] Rhesca CSR-02F, Operating manual, Ver. 3. 05 (2008).