Scallion-Root-Shaped GaN Nanorods Grown by Two-Step Method and Study on their Properties

Abstract:

Two-step growth technology to successfully synthesize scallion-root-shaped GaN nanorods was presented in this paper. This growth method is applicable to continuous synthesis a large number of single-crystalline GaN nanorods with a high purity at a low cost. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) are employed to characterize the structure, composition and morphology of as-grown GaN nanorods. The results show that the obtained nanorods are single-crystal GaN with hexagonal wurtzite structure and have a relatively high purity. The diameter of the nanorods is about 500nm with length up to several tens of micrometers. The representative photoluminescence spectra (PL) measured at room temperature exhibited a strong and broad emission peak at 388nm corresponding to the strong-band-emission in wurtzite GaN, indicating that the nanorods have a good emission property. The growth mechanism is also briefly discussed.

• Periodical: Advanced Materials Research (Volumes 652-654)
• Pages: 197-201
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.652-654.197
• Online since: January 2013
• Authors: Yu Ping Cao, Hai Bo Sun
• Keywords: Ammoniating, Co, GaN Nanorods, Magnetron Sputtering

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