Fabrication of Multi-Level Photoresist Patterns in One-Step Lithography by Using Cr/Ni Multi-Film Thickness Mask

Narongchai Siwarakrangsun; Nithi Atthi; Supanit Porntheeraphat; Jirawat Jantawong; Komgrit Leksakul; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.658.93

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 658Fabrication of Multi-Level Photoresist Patterns in...

Fabrication of Multi-Level Photoresist Patterns in One-Step Lithography by Using Cr/Ni Multi-Film Thickness Mask

Abstract:

The 3-D microstructure can be formed by using Multi-film thickness mask (MFT-mask) with single exposure and single develop. The intensity of the UV light getting through the mask increases as the thickness of the chromium film decreases. However, the ultra-thin Cr film makes the deposition and etching process of Cr film difficult to control. By depositing the nickel film as a buffer layer on the Cr film, the Cr/Ni film stack can filter the UV light and increase the amount step of the light intensity. This can improve the performance of the MFT-mask to generate fine 3-D patterning step similar to gray-scale lithography with lower cost.

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Periodical:

Advanced Materials Research (Volume 658)

Pages:

93-96

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.658.93

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Online since:

January 2013

Authors:

Narongchai Siwarakrangsun, Nithi Atthi, Supanit Porntheeraphat, Jirawat Jantawong, Komgrit Leksakul, Amporn Poyai

Keywords:

3-D Lithography, Chromium-Nickel Film Stacks, Lithography, Micro-Patterning, Multi-Level Film Thickness Mask, Photomask

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