Effect of Al2O3 Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition

Kwang Seok Jeong; Yu Mi Kim; Ho Jin Yun; Seung Dong Yang; Sang Youl Lee; Hi Deok Lee; Ga Won Lee

doi:10.4028/www.scientific.net/AMR.658.108

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 658Effect of Al2O3 Capping Layer in ZnO TFT...

Effect of Al₂O₃ Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition

Abstract:

In this paper, the electrical and physical analysis is carried out to investigate the effect of Al2O3 capping layer on ZnO film using atomic layer deposition. ZnO TFTs shows the metallic conduction behavior as Al2O3 capping layer thickness increases. From SIMS analysis, it is found out that the diffusion of Al into ZnO film is enhanced according to Al2O3 capping layer thickness. Moreover, the defects related to oxygen such as oxygen vacancy increase from XPS analysis and ZnO films reveal less compressive stress by substitution of Zn with Al form XRD analysis. That is, the metallic conduction behavior of ZnO TFTs with Al2O3 capping layer can be explained due to increase in the carrier concentration in ZnO channel layer from oxygen vacancy and substitution of Zn with Al.

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Periodical:

Advanced Materials Research (Volume 658)

Pages:

108-111

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.658.108

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Online since:

January 2013

Authors:

Kwang Seok Jeong, Yu Mi Kim, Ho Jin Yun, Seung Dong Yang, Sang Youl Lee, Hi Deok Lee, Ga Won Lee

Keywords:

Al₂O₃, Atomic Layer Deposition, Oxygen Vacancy, ZnO TFT

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