Dielectric Relaxation and Reliability of Al2O3-HfO2-Al2O3 Sandwiched Metal-Insulator-Metal (MIM) Capacitor

Ho Young Kwak; Hyuk Min Kwon; Sung Kyu Kwon; Jae Hyung Jang; Seung Yong Sung; Su Lim; Hi Deok Lee

doi:10.4028/www.scientific.net/AMR.658.116

Paper Titles

Effect of NiO Nanoparticles on Magnetic Polymer Electrolyte for Dye-Sensitized Solar Cells
p.97

Aging Behavior of Semi-Solid Mg-10Al-0.3Mn Alloy by the Hot Extrusion
p.102

Effect of Al₂O₃ Capping Layer in ZnO TFT Fabricated by Atomic Layer Deposition
p.108

RF Characteristics of SiO₂/HfO₂/SiO₂ MIM Capacitor
p.112

Dielectric Relaxation and Reliability of Al₂O₃-HfO₂-Al₂O₃ Sandwiched Metal-Insulator-Metal (MIM) Capacitor
p.116

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO₂ and Si₃N₄ Buffer Layer for System on Panels Application
p.120

Estimation of Tension Force in Short Hangers Using Added Mass Method
p.124

A Novel Patternable Electrophoretic Polymer Coating for Sidewall Packaging in Microelectronic Devices
p.134

Investigates of Fabric Coating Approaches: Process and Observation
p.140

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 658Dielectric Relaxation and Reliability of...

Dielectric Relaxation and Reliability of Al₂O₃-HfO₂-Al₂O₃ Sandwiched Metal-Insulator-Metal (MIM) Capacitor

Abstract:

. In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al2O3-HfO2-Al2O3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 658)

Pages:

116-119

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.658.116

Citation:

Cite this paper

Online since:

January 2013

Authors:

Ho Young Kwak, Hyuk Min Kwon, Sung Kyu Kwon, Jae Hyung Jang, Seung Yong Sung, Su Lim, Hi Deok Lee

Keywords:

AHA (Al₂O₃-HfO₂-Al₂O₃), Charge Trapping, Dielectric Relaxation, Metal-Insulator-Metal (MIM), Reliability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] K. Takeda, T. Yanada, T. Imai, T. Fujiwara, T. Hashimoto, and T. Ando: IEEE Trans. Electon Devices, Vol. 55 (2008), p.1359.

Google Scholar

[2] S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu: IEEE Electron Devices Lett., Vol. 24 (2002), p.185.

Google Scholar

[3] S. J. Ding, H. Hu, C. Zhu, S. J. Kim, X. Yu, M. F. Li, B. J. Cho, S. H. Chan, M. B. Yu, S. C. Rustagi, A. Chin, and D. L. Kwong: IEEE Trans. Electon Devices, Vol. 51 (2004), p.886.

DOI: 10.1109/ted.2004.827367

Google Scholar

[4] S. H. Wu, C. K. deng, T. H. Hou, and B. S. Chiou: Jpn. J. Appl. Phys., Vol. 49 (2010), p. 04DB16-1.

Google Scholar

[5] X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L, Kwong, P. D. Foo, and M. B. Yu: IEEE Electron Devices Lett., Vol. 24 (2003), p.63.

Google Scholar

[6] J. C. Kuenen, and G. M. Meijer: IEEE Trans. Instrumentation Measure., Vol. 45 (1996), p.89.

Google Scholar

[7] A. Zanchi, F. Tsay, and I. Papantonopoulos: IEEE Journal of Solid-State Circuits, Vol. 38 (2003), p. (2077).

Google Scholar

[8] Z. Ning, H. Casier, J. D. Maeyer, E. Heirman, E. D, Vylder, K. Noldus, G. V. Herzeele, and D. Hegsted: IEEE Trans. Semiconductor Manufacturing, Vol. 21 (2008), p.549.

DOI: 10.1109/tsm.2008.2004339

Google Scholar

[9] H. Y. Kwak, H. M. Kwon, Y. J. Jung, S. K. Kwon, J. H. Jang, W. I. Choi, M. L. Ha, J. I. Lee, S. J. Lee, and H. D. Lee: Solid State Electronics, Vol. 79 (2013), p.218.

DOI: 10.1016/j.sse.2012.09.007

Google Scholar

[10] J. W. Fattaruso, M. D. Wit, G. Warwar, K. S. Tan, and R. K. Hester: IEEE Journal of Solid-State Circuits, Vol. 25 (1990), p.1550.

DOI: 10.1109/4.62192

Google Scholar