Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

Sang Youl Lee; Jae Sub Oh; Seung Dong Yang; Ho Jin Yun; Kwang Seok Jeong; Yu Mi Kim; Hi Deok Lee; Ga Won Lee

doi:10.4028/www.scientific.net/AMR.658.120

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 658Polycrystalline...

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO₂ and Si₃N₄ Buffer Layer for System on Panels Application

Abstract:

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

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Periodical:

Advanced Materials Research (Volume 658)

Pages:

120-123

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.658.120

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Online since:

January 2013

Authors:

Sang Youl Lee, Jae Sub Oh, Seung Dong Yang, Ho Jin Yun, Kwang Seok Jeong, Yu Mi Kim, Hi Deok Lee, Ga Won Lee

Keywords:

Buffer Layer, Crystallization, Memory, Poly-Si, SONOS

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