Investigation of Bipolar Resistance Switching Properties in SrTiO3 Thin Films with Symmetric Electrodes Structure

Wei Dong Yu; Xiao Min Li; Yi Wen Zhang; Rui Yang; Qun Wang; Li Dong Chen

doi:10.4028/www.scientific.net/AMR.66.119

Paper Titles

Low-Temperature Sintering and Microwave Dielectric Properties of the Zn₂SiO₄ Ceramics
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Thermal Shock-Resistance Performance of Al₂TiO₅/Al₂O₃ Composites
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Effect of LaCl₃ on the Properties of LAS Ceramics
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Preparation of Fine Mullite Powder in a SHS Chemical Furnace System
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Investigation of Bipolar Resistance Switching Properties in SrTiO₃Thin Films with Symmetric Electrodes Structure
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The Effect of Oxygen Annealing on the Resistance Switching Properties of the La_0.7Ca_0.3MnO₃ Films
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Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films
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Synthesis of Metastable Tungsten Carbide Nanoparticles by Mechanochemical Alloying Process
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The Rheological Characterization of the Writing Performance of Carbon Black Gel Ink
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Investigation of Bipolar Resistance Switching Properties in SrTiO₃Thin Films with Symmetric Electrodes Structure

Abstract:

A noncrystalline SrTiO3 (STO) thin film was grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The Pt thin film was deposited on STO film as top electrode, forming a symmetric structure (Pt/STO/Pt) to exclude the influence of the electrical difference in STO-electrode interfaces. It was found that a stable bipolar resistive switching was obtained in this structure. In a current sweep, an obvious S type negative differential conductance (NDC) phenomenon was found in both polarities. And in a voltage sweep, no NDC was observed due to the current control mechanism of S type NDC effect. The possible mechanism of this effect is discussed preliminarily.