The Effect of Oxygen Annealing on the Resistance Switching Properties of the La_0.7Ca_0.3MnO₃ Films

Abstract:

A series of La0.7Ca0.3MnO3 films are fabricated by pulsed laser deposition under controlling the oxygen partial pressure or adding an oxygen post-annealing process. The film after oxygen post-annealing shows an orientation change and has more non-lattice oxygen near the surface than those of the films without annealing. Moreover, only the structure of Ag/La0.7Ca0.3MnO3/Pt with the oxygen annealed film behaves a big current-voltage hysteresis and stable resistance switching properties by applying voltage pulse. Experimental results indicate that the increase of non-lattice oxygen content induced by oxygen annealing in the vicinity of the Ag/La0.7Ca0.3MnO3 interface contributes to the occurrence of resistance switching. And with the accurate controlling of the oxygen annealing parameters, the improvement of resistance switching property of the La0.7Ca0.3MnO3 film can be expected.

• Periodical: Advanced Materials Research (Volume 66)
• Pages: 127-130
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.66.127
• Online since: April 2009
• Authors: Rui Yang, Xiao Min Li, Wei Dong Yu, Xin Jun Liu, Q. Wang
• Keywords: La_0.7Ca_0.3MnO₃ Thin Film, Oxygen Annealing, Resistance Switching

References

This article has no references.