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Concentration Dependent Physical Properties of SiSn Solid Solution

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Abstract:

In the present investigation, we report theoretical study of total energy, energy band gap in X-direction, bulk modulus, elastic constants and pressure derivative of elastic constants of Si1-xSnxsolid solution using higher-order perturbation theory along with application of our proposed potential, where x is concentration of Sn. The parameter of our potential is determined using zero-pressure equilibrium condition. In the present calculations, The local-field correction function can be employed to consider exchange and correlation effects. The present study showed that the physical quantities under investigation varied with the concentration of the constituent element.

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Periodical:

Advanced Materials Research (Volume 665)

Pages:

150-153

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.665.150

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Online since:

February 2013

Authors:

A.R. Jivani, Ashvin R. Jani

Keywords:

Bulk Modulus, Elastic Constants, Pressure Derivative of Elastic Constants, Pseudopotential Method, Solid Solution, Total Energy

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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