Temperature Dependence Electron-Impurity Scattering Rate in Doped Bilayer Graphene

Abstract:

Apart from its promising new material for technological innovations and applications, graphene offers a new and novel physics. In recent past, both single layer and bilayer Graphene have extensively been studied. Properties of Graphene sharply differ from that of 2DEG observed in doped semiconductor heterostructures. One of the important properties requisite for device making is charge transport. It has been suggested that considering a scattering mechanism based on screened charged impurities, one can obtain from a Boltzmann equation approach a conductivity that agrees with the experimental result on graphene. In this paper, we present a calculation of electron-impurity scattering rate, as a function of quasi particle energy ε measured from Fermi energy εf, in doped bilayer graphene for both high temperature TTf and low temperature TTf regimes. In the low temperature limit, we observe dip at normalized energy y=1.0, which is absent in the high temperature limit. Our numerical calculation shows that scattering rate remains almost constant with temperature in both regimes.

• Periodical: Advanced Materials Research (Volume 665)
• Pages: 154-158
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.665.154
• Online since: February 2013
• Authors: Digish K. Patel, K.N. Vyas, A.C. Sharma
• Keywords: Bilayer Graphene, Electron-Impurity Scattering Rate

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