[1]
K. N. Shreekanthan, B.V. Rajendra, V.B. Kasturi and G.K. Shivakumar, Cryst. Res. Technol. 38 (2003) 30.
Google Scholar
[2]
D. Haneman, G.H.J. Wenterar, R.C. Kainthala, Sol. Energy Mater. 10 (1984) 69.
Google Scholar
[3]
A.K. Rautri, R. Thangraj, A.K. Sharma, B.B. Tripathi, O.P. Agnihotri, Thin Solid Films 91 (1982) 55.
Google Scholar
[4]
A. Meskauskar and Jvisvakas, Thin Solid Films 36 (1976) 81.
Google Scholar
[5]
S. Uthana and P.J. Reddy, Phys. Stat. Sol. 65A (1981) K 113.
Google Scholar
[6]
G.S. Shahane, D.S. Sutvare and L.P. Deshmukh, Indian J. Pure & Appl. Phys. 34 (1996) 153.
Google Scholar
[7]
C. Baban, G.I. Rusu, P. Prepelita, J. of optoelectro. & Adv. Mater. 7 (2005) 817.
Google Scholar
[8]
K. Sarmah, R. Sarma, H.L. Das, Chalc. Lett. 5 (2008) 153.
Google Scholar
[9]
N.J. Suthan kissinger, M. Jayachandran, K. Perumal, C. Sanjeevi raja, Bull. Mater. Sci. 30 (2007) 547.
DOI: 10.1007/s12034-007-0085-7
Google Scholar
[10]
S. Gogoi, K. Barua, Japanese Journal of Applied Physics 18 (1979) 2233.
Google Scholar
[11]
A. Ebina, T. Takahashi, J. Cryst. Growth 59 (1982) 51.
Google Scholar
[12]
JCPDS- International centre for diffraction data, USA card No. 77-2307, (1998).
Google Scholar
[13]
R. Bhargava (cd), Properties of Wide Bandgap II-IV Semiconductors, Inspec. London (1997).
Google Scholar
[14]
J. I. Pankove, Optical process in semiconductors, Butterworth, London U.K., (1971).
Google Scholar
[15]
M. A. Al-Sabayleh, Australian Journal of Basic and Applied Sciences 3(2) (2009) 669.
Google Scholar
[16]
J. Shadia. I. khmayies, N. Riyad, Ahmad-Bitar, American Journal of Applied Sciences 5 (9) (2008) 1141.
Google Scholar
[17]
G. I. Rusu, P. Prepeliţa, R. S. Rusu, N. Apetroaie, G. Oniciuc, A. Amariei, Journal of Optoelectronics and Advanced materials 8(3) (2006) 922.
Google Scholar
[18]
M. G. Syed Basheer Ahamed, V. S. Nagarethinam, A. Thayumanavan, K. R. Murali, C. Sanjeeviraja, M. Jayachandran, J. Mater Sci: Mater Electron 21 (2010) 1229–1234.
DOI: 10.1007/s10854-009-0051-9
Google Scholar