Investigations on Tin Selenide Thin Film Based Schottky Barrier Diodes by I-V-T Method

Kiran Kumar Patel; K.D. Patel; Mayur Patel; Keyur S. Hingarajiya; V.M. Pathak

doi:10.4028/www.scientific.net/AMR.665.297

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 665Investigations on Tin Selenide Thin Film Based...

Investigations on Tin Selenide Thin Film Based Schottky Barrier Diodes by I-V-T Method

Abstract:

Tin Selenide thin films have been deposited using thermal evaporation technique on chemically and ultrasonically cleaned glass substrates. The stoichiometry of deposited films has been studied using Energy Dispersive Analysis of X-rays (EDAX).The orthorhombic structure and polycrystalline nature of the films were also revealed by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. The well characterized thin film of SnSe was then used to fabricate Ag/p-SnSe/In Schottky barrier diode. The I-V characteristics of prepared diodes have been investigated over the temperature range of 303 K to 393 K. The forward biased I-V characteristics of prepared structure has been analyzed using TE theory and different device parameters have been evaluated and discussed in present paper. The Richardson constant was also determined from the conventional Richardson plot and it is found close to the reported value.

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Periodical:

Advanced Materials Research (Volume 665)

Pages:

297-301

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.665.297

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Online since:

February 2013

Authors:

Kiran Kumar Patel, K.D. Patel, Mayur Patel, Keyur S. Hingarajiya, V.M. Pathak

Keywords:

I-V-T Method, Schottky Barrier Diode (SBD), Stoichiometry, Tin Selenide Thin Films, X-Ray Diffraction (XRD)

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