Diode Characteristics of Zinc Oxide Thin Film at Different Deposition Time for FET Applications

Abstract:

Zinc oxide (ZnO) is a one of the most interesting compound semiconductors that received more attention during last few years due to its unique properties. Due to that, this study has been done to manipulate those properties to be used for FET applications. The ZnO thin film has been deposited using the thermal chemical vapor deposition. This is done in a double furnace, which vapored the ZnO powder at different temperature. The growth of the ZnO thin film has been observed using SEM and the electrical properties has been analyzed by using I-V probe station. This is done to study the diode characteristics of ZnO thin film to be used in FET applications.

• Periodical: Advanced Materials Research (Volume 667)
• Pages: 393-396
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.667.393
• Online since: March 2013
• Authors: M. Salina, Mohd Zainizan Sahdan, N.A. Yusoff, U.M. Noor, Mohamad Rusop
• Keywords: Diode, FET, Thin Film, Zinc Oxide (ZnO)

References

[1] Richard C. Jaeger and Travis N. Blalock, Microelectronic Circuit Design, Mc Graw Hill International Edition, Chapter 4.

[2] Robert Chau, Justin Brask, Suman Datta, and Gilbert Duwey, Application of High-k Gate Dielectrics and Metal Gate Electrodes to Enable Silicon and Non-silicon Logic Nanotechnology, Intel Corporation.

DOI: 10.1016/j.mee.2005.04.035

[3] Scaling for High Performance CMOS: From SiO2 to High-k, Intel Corporation.

[4] Intel Core Microarchitecture, Introducing the 45 nm Next Generation Intel Core Microarchitecture", Intel Corporation.

DOI: 10.1109/hotchips.2007.7482514

[5] Jack C. Lee, H.J. Cho, C.S. Kuag, S. Rhee, and Y.H. Kim, High-k Dielectrics and MOSFET Characteristics, IEEE Electron Device Module (2003) 95-98.

[6] Matthias Passlack, Ravi Droopad, and Karthik Rajagopalan, High Mobility NMOSFET Structure With High-k Dielectric, IEEE Electron Device Letter 26 (10) (2005) 713-715.

DOI: 10.1109/led.2005.856707

[7] Vladimir A. Fonoberov and Alexander A. Balandin, Journal of Nanoelectronics and Optoelectronics 1 (2006) 19-38.

[8] Oleg Lupan, Sergiu Shishiyanu, Lee Chow, Teodor Shishiyanu, Thin Solid Films 516 (2008) 3338-3345.

DOI: 10.1016/j.tsf.2007.10.104

[9] Haoyong Yin, Zhude Xu, Qingsheng Wang, Jingyi Bai, Huahui Bao, Materials Chemistry and Physics 91 (2005) 130-133.

[10] Zhao Guo Liang, Lin Bi Xia, Hong Liang, Meng Xiang Dong, and Fu Zhu Xi, Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition, ZHOA Guo-Liang et al., Chin. Phys. Lett. Vol. 21, No. 7 (2004).

DOI: 10.1088/0256-307x/21/7/055

[11] L.L. Chen, H.P. He, Z.Z. Ye, Y.J. Zeng, J.G. Lu, B.H. Zhao, L.P. Zhu, Influence of post-annealing temperature on properties of ZnO: Li thin films, Chemical Physics Letters 420 (2006) 358-361.

DOI: 10.1016/j.cplett.2005.12.071