Electrical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film Prepared Using Sol-Gel Spin-Coating Method at Different Doping Concentrations

N.D. Md Sin; Mohamad Hafiz Mamat; Mohamad Rusop

doi:10.4028/www.scientific.net/AMR.667.507

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 667Electrical Properties of Nanostructured Aluminum...

Electrical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film Prepared Using Sol-Gel Spin-Coating Method at Different Doping Concentrations

Abstract:

Aluminum (Al) doped Zinc Oxide (ZnO) thin films were prepared using sol-gel spin-coating method at different doping concentrations. The effects of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using Current-Voltage (I-V) measurement and field emission scanning electron microscope (FESEM) for electrical properties and surface morphology, respectively. The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The FESEM investigations show that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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Periodical:

Advanced Materials Research (Volume 667)

Pages:

507-510

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.667.507

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Online since:

March 2013

Authors:

N.D. Md Sin, Mohamad Hafiz Mamat, Mohamad Rusop

Keywords:

Al-Doped ZnO, Doping Concentration, Electrical Properties, Sol-Gel Spin-Coating Method, Surface Morphology

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