InAsSb Single Crystals and Photoconductors with Cutoff Wavelengths Longer than 8 µm

Yu Zhu Gao; Xiu Ying Gong; Takamitsu Makino; Hirofumi Kan; Guang Hui Wu; Yan Bin Feng; Tadanobu Koyama; Yasuhiro Hayakawa

doi:10.4028/www.scientific.net/AMR.668.664

Paper Titles

Experimental Research on Stress-Strain Curve of Carbon Fiber Reinforced Concrete
p.640

Experimental Study on the Viscoelastic Properties of Asphalt Concrete under Chloride Corrosion
p.645

Steel Truss Girder Bridge Reinforcement Removing Phase Analysis of Stress Dynamic Monitoring
p.650

Experimental Study of Nd:YVO₄/KTP Solid Laser Pumped by Diode Laser
p.659

InAsSb Single Crystals and Photoconductors with Cutoff Wavelengths Longer than 8 µm
p.664

Sintering of Ultrahigh Density and Highly Conductive ZnO-Ga₂O₃ Ceramic Targets
p.670

The Study of the Influence of Surface Geometric Error on Optical Properties
p.675

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films
p.681

Sintering of Ti-Doped Tungsten Trioxide Ceramic Targets
p.686

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 668InAsSb Single Crystals and Photoconductors with...

InAsSb Single Crystals and Photoconductors with Cutoff Wavelengths Longer than 8 µm

Abstract:

High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 mm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 mm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 m. Peak detectivity Dλp* (6.5 mm, 1200 Hz) reached 5.4 × 109 cm Hz1/2 W-1 for InAs0.052Sb0.948 immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm Hz1/2 W-1 at the wavelength of 8 and 9 mm respectively. The good performances of InAsSb detectors indicate the possible detection applications

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 668)

Pages:

664-669

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.668.664

Citation:

Cite this paper

Online since:

March 2013

Authors:

Yu Zhu Gao, Xiu Ying Gong, Takamitsu Makino, Hirofumi Kan, Guang Hui Wu, Yan Bin Feng, Tadanobu Koyama, Yasuhiro Hayakawa

Keywords:

Detectivity, Immersed Photoconductor, InAsSb, Narrow Bandgap, Single Crystal

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Kumar and P. S. Dutta: Appl. Phys. Lett Vol. 89 (2006), pp.162101-1.

Google Scholar

[2] J. -I. Chyi, S. Kalem, N. S. Kumar, C. W. Litton and H. Morkoc: Appl. Phys. Lett Vol. 53 (1988), p.1092.

Google Scholar

[3] J. D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu and M. Razeghi: Appl. Phys. Lett Vol. 68 (1996), p.99.

Google Scholar

[4] V. K. Dixit, B. Bansal, V. Venkataraman, H. L. Bhat, K. S. Chandrasekharan and B. M. Arora: J. Appl. Phys Vol. 96 (2004), p.4989.

Google Scholar

[5] Y. Z. Gao, X. Y. Gong, H. Kan, M. Aoyama and T. Yamaguchi: Jpn. J. Appl. Phys Vol. 38 (1999), p. (1939).

Google Scholar

[6] Y. Z. Gao, H. Kan, F. S. Gao, X. Y. Gong and T. Yamaguchi: J. Cryst. Growth Vol. 234 (2002), p.85.

Google Scholar

[7] Y. Z. Gao, X. Y. Gong and T. Yamaguchi: Jpn. J. Appl. Phys Vol. 45 (2006), p.5732.

Google Scholar

[8] A. R. Denton and N. W. Ashcroft: Phys. Rev. A Vol. 43 (1991), p.3161.

Google Scholar

[9] H. H. Wieder and A. R. Clawson: Thin Solid Films Vol. 15 (1973), p.217.

Google Scholar

[10] E. H. Steenbergen, Y. Huang, J. –H. Ryou, L. Ouyang, J. –J. Li, D. J. Smith, R. D. Dupuis and Y. –H. Zhang: Appl. Phys. Lett Vol. 99 (2011), pp.071111-1.

Google Scholar

[11] J. Piotrowski and A. Rogalski: Infrared Phys. Technol Vol. 46 (2004), p.115.

Google Scholar