Sintering of Ultrahigh Density and Highly Conductive ZnO-Ga₂O₃ Ceramic Targets

Abstract:

The ultrahigh density Gallium (Ga2O3 1 wt%) doped zinc oxide (ZnO, 99wt%) targets were prepared by air sintering. The relative density, conductivity, bending strength, Vickers hardness and shrinkage ratio of GZO targets were measured. The morphologies and microstructures were characterized by XRD and SEM. It turns out that sintered GZO targets achieved a relative density of 98%, square resistance of 7Ω/□, Vickers hardness of 310HV and a bending strength of 90.79MPa. The best sintering temperature is 1300°C. The Ga2O3 added can effectively enter into the ZnO lattice structure to form solid solution during sintering. The second phase of GaZn2O4 turned out when the sintering temperature was 1350°C.

• Periodical: Advanced Materials Research (Volume 668)
• Pages: 670-674
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.668.670
• Online since: March 2013
• Authors: Cun Qi Liu, Zhong Jian Zhang, Ling Gao, Chao Xiao, Hai Tao Yang
• Keywords: Gallium Doped Zinc Oxide (GZO), Sintering, Sputtering Target, Transparent Conducting Oxide

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