Effect of Abrasives on the Lapping Performance of 6H-SiC Single Crystal Wafer

Wei Li; Qiu Sheng Yan; Jia Bin Lu; Ji Sheng Pan

doi:10.4028/www.scientific.net/AMR.690-693.2179

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 690-693Effect of Abrasives on the Lapping Performance of...

Effect of Abrasives on the Lapping Performance of 6H-SiC Single Crystal Wafer

Abstract:

In order to remove the cutting marks on the cutting surface of 6H-SiC single crystal wafer, experiments were conducted to investigate the effect of the abrasive characteristics (types, grain size, concentration and mixed abrasives) on the lapping performance of 6H-SiC single crystal wafer, then the removal mechanism of the abrasive grains in the lapping process was studied. Results indicate that the abrasives with larger grain size and higher hardness can result in a higher material removal rate while the abrasives with smaller grain size and lower hardness can achieve a lower surface roughness value. When the concentration of the abrasives is 7.69 wt%, a good lapping effect was obtained. Lower surface roughness value Ra can be obtained with a high material removal rate by using certain proportion mixed abrasives. Selecting appropriate abrasives can obtain a high surface quality of 6H-SiC wafer with a high efficiency.

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Periodical:

Advanced Materials Research (Volumes 690-693)

Pages:

2179-2184

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.2179

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Online since:

May 2013

Authors:

Wei Li, Qiu Sheng Yan, Jia Bin Lu, Ji Sheng Pan

Keywords:

6H-SiC, Abrasive, Lapping, Material Removal, Surface Roughness (SR)

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