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Paper Titles
A Template-Matching-Based Fast Algorithm for PCB Components Detection
p.3205
Abrasive-Free Polishing of Hard Disk Substrate with H2O2-K2S2O8-NaHSO3 Slurry
p.3209
Aspherical Surface Contact Detection Error Analysis
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Deep-Hole Precision Honing of Difficult-to-Cut Materials
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Effect of K2S2O8 on Material Removal Rate in Abrasive-Free Polishing of Hard Disk Substrate
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Electrochemical Deburring of Miniature Holes
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Numerical Analysis of the Ultrasonic Honing Chatter Based on the Stribeck Model
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Quantitative Analysis of Lateral Setting Error in Two-Point Method
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Simulation Analysis of Thermodynamics on the Belt Spindle of the Machining Center
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Effect of K2S2O8 on Material Removal Rate in Abrasive-Free Polishing of Hard Disk Substrate

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Abstract:

The role of K2S2O8 (KPS) initiator on the material removal rate (MRR) of hard disk substrate in the H2O2-based slurry was investigated. Experiment results indicate that the MRR of slurry containing KPS and H2O2 is higher than that of slurry containing only H2O2 under the same testing conditions. The electrochemical test shows that KPS can increase the corrosion rate of hard disk substrate in the H2O2-based slurry. The electron spin-resonance spectroscopy (EPR) analysis shows that KPS, as an initiator, can increase the number of OH• free radical. Further, the reaction mechanism of KPS in abrasive-free polishing of hard disk substrate is discussed.

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Periodical:

Advanced Materials Research (Volumes 690-693)

Pages:

3222-3225

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.3222

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Online since:

May 2013

Authors:

Rong Zhao, Hong Lei

Keywords:

Abrasive-Free Polishing (AFP), Hard Disk Substrate, K2S2O8 Initiator, Material Removal Rate (MRR)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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