The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

K.C. Lin; C.H. Chou; J.Y. Chen; C.J. Li; J.Y. Huang; C.H. Liu

doi:10.4028/www.scientific.net/AMR.699.422

Paper Titles

Conductivity of Composite Material Based on System NdPo₄•nH₂O- CsH₂PO₄
p.398

Effect of Spinrate on the Structural, Optical and Surface Properties of the Sol-Gel Spin Coated Zinc Oxide Thin Films
p.403

Mechanical Properties of Anode Layer of Solid Oxide Fuel Cell after Reduction
p.409

Stability Analysis of a Thin Pseudoplastic Fluid with Condensation Effects Flowing on a Rotating Circular Disk
p.413

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics
p.422

LCF Life Prediction Model of Coiled Tubing Based on Fatigue Damage Accumulation
p.426

Investigation into the Influence of Coating Speed on Ink Penetration
p.432

The Simulation Analysis of MOSFET Channel Stress for Different Oxide/Nitride/Oxide (ONO) Spacer Thicknesses
p.436

The Analysis of the Process-Induced Channel Stress in N-MOSFET
p.440

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 699The Effect of Ternary Material (Zr, Y, and O)...

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

Abstract:

In this research, the Y₂O₃ layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y₂O₃/ Y₂O₃+Zr/p-Si and Al/ZrN/ Y₂O₃+Zr/ Y₂O₃/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

You might also be interested in these eBooks

Materials Science and Chemical Engineering

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 699)

Pages:

422-425

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.699.422

Citation:

Cite this paper

Online since:

May 2013

Authors:

K.C. Lin, C.H. Chou, J.Y. Chen, C.J. Li, J.Y. Huang, C.H. Liu

Keywords:

Leakage Current, Stack Structure, Thin Film, Y₂O₃

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M. H. Cho, D. H. Ko, Y. K. Choi, I. W. Lyo, and K. Jeong, "Structural characteristics of Y2O3 films grown on oxidized Si(111) surface", Journal of Applied Physics 89, pp.1946-1652, (2001).

DOI: 10.1063/1.1337920

Google Scholar

[2] F. Paumier, R. J. Gaboriaud, and A. R. Kaul, "Yttrium oxide thin films: chemistrystoichiometry- strain and microstructure", Crystal Engineering 5, p.169–175, (2002).

DOI: 10.1016/s1463-0184(02)00026-6

Google Scholar

[3] R. J. Gaboriaud, F. Paumier, F. Pailloux, and P. Guerin, "Y2O3 thin films: internal stress and microstructure", Materials Science and Engineering B 109, p.34–38, (2004).

DOI: 10.1016/j.mseb.2003.10.023

Google Scholar

[4] F. Paumier and R. J. Gaboriaud, "Interfacial reactions in Y2O3 thin films deposited on Si(100) ", Thin Solid Films 441, p.307–310, (2003).

DOI: 10.1016/s0040-6090(03)00882-4

Google Scholar

[5] L. Manchanda, and M. Gurvitch , "Yttrium Oxide/Silicon Dioxide: A new dielectric structure for VLSI/ULSI circuits", IEEE Electron Device Letters 9, pp.180-182, (1988).

DOI: 10.1109/55.682

Google Scholar

[6] L. K. Chu, W. C. Lee, M. L. Huang, Y. H. Chang, L. T. Tung, C. C. Chang, Y. J. Lee, J. Kwo, and M. Hong, "Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge", Journal of Crystal Growth 311, p.2195–2198, (2009).

DOI: 10.1016/j.jcrysgro.2008.10.069

Google Scholar

[7] W. J. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee , "Ultrathin zirconium silicate film with good thermal stability for alternativegate dielectric application", Applied Physics Letters 77, pp.1704-1706, (2000).

DOI: 10.1063/1.1308535

Google Scholar