The Simulation Analysis of MOSFET Channel Stress for Different Oxide/Nitride/Oxide (ONO) Spacer Thicknesses

J.Y. Chen; Z.H. Chen; K.C. Lin; M.J. Twu; Y.H. Hung; P.Y. Chou; G.T. Chen; Y.S. Liu; C.H. Liu

doi:10.4028/www.scientific.net/AMR.699.436

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 699The Simulation Analysis of MOSFET Channel Stress...

The Simulation Analysis of MOSFET Channel Stress for Different Oxide/Nitride/Oxide (ONO) Spacer Thicknesses

Abstract:

It is demonstrated that the strained-Si can enhance the channel stress with the contact etching stop layer (CESL) stressor. In addition to CESL, this article also includes ONO spacer and investigates the impact of ONO spacer thickness on the channel stress. It is found that the channel stress increases when the nitride thickness of the ONO spacer increases. On the other hand, the stress distribution is simulated and analyzed for the devices with or without CESL stressor. Generally speaking, based on the simulation results, the channel stress of MOSFET devices increases when the nitride stressor of ONO spacer and/or CESL increases.

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Periodical:

Advanced Materials Research (Volume 699)

Pages:

436-439

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.699.436

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Online since:

May 2013

Authors:

J.Y. Chen, Z.H. Chen, K.C. Lin, M.J. Twu, Y.H. Hung, P.Y. Chou, G.T. Chen, Y.S. Liu, C.H. Liu

Keywords:

Channel Stress, Contact Etch Stop Layer (CESL), MOSFET, Spacer

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