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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 701Electronic Structure of Defects in SnTe

Electronic Structure of Defects in SnTe

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Abstract:

My ab initio electronic structure calculations in RSn_2n-1Te_2n, n=16, R = a vacancy, Cd, and In show that when Sn atom is substituted by R, the Density of State (DOS) of the valence and conduction bands get strongly perturbed. There are significant changes near the band gap region. Sn vacancy causes very little change near the bottom of the conduction band DOS whereas there is an increase in the DOS near the top of the valence band. Results for In impurity shows that, unlike PbTe, the deep defect states in SnTe are resonant states near the top of the valence band. In PbTe these deep defect states lie in the band-gap region (act as n-type). This fundamental difference in the position of the deep defect states in SnTe and PbTe explains the experimental anomalies seen in the case of In impurities (act as n-type in PbTe and p-type in SnTe).

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Periodical:

Advanced Materials Research (Volume 701)

Pages:

125-130

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.701.125

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Online since:

May 2013

Authors:

Salameh Ahmad

Keywords:

Defect, Electronic Structure, Narrow Gap Semiconductors, SnTe

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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