Study on Semiconductor Materials with Interaction of Beta Radiation with GaN

Hai Sheng San; Shu Lin Yao; Qiang Zhang; Ran Bin Chen

doi:10.4028/www.scientific.net/AMR.703.63

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 703Study on Semiconductor Materials with Interaction...

Study on Semiconductor Materials with Interaction of Beta Radiation with GaN

Abstract:

Wide-band gap semiconductor GaN is a promising material for direct-conversion nuclear micro-batteries to meet energy requirement for micro-systems. The properties of semiconductor GaN materials were studied by the interaction of beta radiation with GaN. By the Monte Carlo simulation, the trajectories of incident beta particles in GaN and the total energy deposition were obtained, which provide an optimal design in p-n junction width of GaN.

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Periodical:

Advanced Materials Research (Volume 703)

Pages:

63-66

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.703.63

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Online since:

June 2013

Authors:

Hai Sheng San, Shu Lin Yao, Qiang Zhang, Ran Bin Chen

Keywords:

Beta Radiation, Betavoltaic Nuclear Battery, GaN, Monte-Carlo Simulation

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