Design of CMP Slurry in CMP SiC Crystal Substrate (0001) Si Surface Based on Alumina (Al2O3) Abrasive

Jian Xiu Su; Zhu Qing Zhang; Xing Long Liu; Zhi Xiang Liu; Qi Gao Feng

doi:10.4028/www.scientific.net/AMR.703.90

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 703Design of CMP Slurry in CMP SiC Crystal Substrate...

Design of CMP Slurry in CMP SiC Crystal Substrate (0001) Si Surface Based on Alumina (Al₂O₃) Abrasive

Abstract:

SiC crystal substrate has been widely applied in the field of semiconductor industry and optical components recently,such as IC and semiconductor lighting. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina (Al₂O₃) abrasive had been done in CMP SiC crystal substrate (0001) Si surface by a lot of tests. A CMP slurry based on alumina (Al₂O₃) abrasive for SiC crystal substrate (0001) Si surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 3 nm/min and the surface roughness Ra is about 0.198μm.