Electric Fatigue in Metal/Ferroelectric Polymer/SiO2/p-Si Capacitors

Jing Hang Hu; Xue Jian Yan; Guo Dong Zhu

doi:10.4028/www.scientific.net/AMR.706-708.103

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 706-708Electric Fatigue in Metal/Ferroelectric...

Electric Fatigue in Metal/Ferroelectric Polymer/SiO₂/p-Si Capacitors

Abstract:

In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. In this letter we report the observation of electric fatigue in metal/ferroelectric polymer/SiO₂/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO₂ layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO₂/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.

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Periodical:

Advanced Materials Research (Volumes 706-708)

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103-107

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.706-708.103

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Online since:

June 2013

Authors:

Jing Hang Hu, Xue Jian Yan, Guo Dong Zhu

Keywords:

Capacitor Memories, Electrical Fatigue, Ferroelectric Polymer

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