A Novel Method to Extract Carrier Mobility and Threshold Voltage in High-Voltage DDD MOSFETs

Abstract:

In this work, we apply the Hauser technique and combine a newer inversion layer charge model to extract the effective channel carrier mobility (μ_eff) and threshold voltage (V_th) of several high-voltage DDD MOSFETs with different dimensions in channel length and width. This paper proposes and demonstrates that our new method is a novel and efficient to extract the carrier mobility and threshold voltage in the DDD MOSFET, meanwhile, the extracted data is well consistent with UT model. And, only the extracted values by our new method and BCV method can clearly reflect the narrow-width effect which results from the so called LOCOS isolation technique. Therefore, it is clearly to see that our extraction technique can exactly reflect the device characteristics in high-voltage DDD MOSFETs.

• Periodical: Advanced Materials Research (Volumes 706-708)
• Pages: 1709-1715
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.706-708.1709
• Online since: June 2013
• Authors: Shen Li Chen, Hsin Yang Shih
• Keywords: Double-Diffused Drain (DDD), Effective Carrier Mobility (μ_eff), Local Oxidation of Silicon (LOCOS), MOSFET, Threshold Voltage (V_th)

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