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Effect of Annealing Temperature on Resistance Switching Behavior of Bi4Ti3O12 Thin Films Deposited on ITO Glass

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Abstract:

Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by solgel method were studied, and the effect of annealing temperature on resistance switching behavior has been studied. The main point is accented on decrease the operation voltage. Two controllable resistance states were observed by applying voltage pulses. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Space Charge Limited Current(SCLC).

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Periodical:

Advanced Materials Research (Volumes 706-708)

Pages:

82-84

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.706-708.82

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Online since:

June 2013

Authors:

Bing Cheng Sun, Hua Wang, Ji Wen Xu

Keywords:

Annealing Temperature, Bi4Ti3O12, Resistance Switching, Sol-Gel

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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