A Study on 400V Sized Trench Power Semiconductor for Smart Power ICs

Abstract:

Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

• Periodical: Advanced Materials Research (Volumes 712-715)
• Pages: 1771-1774
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.712-715.1771
• Online since: June 2013
• Authors: Ey Goo Kang
• Keywords: BV, P-Base Dos, Planar, Power MOSFET, R_on, Trench, V_th

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