On the Mechanism of Enhanced Photoluminescence of SiN_x:Tb³⁺ Compared with SiO_x:Tb³⁺

Abstract:

Room-temperature photoluminescence (PL) properties of the Tb³⁺ ion implanted non-stoichiometric silicon nitride (SiN_x:Tb³⁺) and silicon dioxide (SiO_x:Tb³⁺) were studied. The films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and then annealed at different temperatures for 1 hour in flowing N₂ after the Tb ion-implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb³⁺ in the wavelength from 470 nm to 625 nm for both kinds of films. Moreover, the PL intensity of Tb³⁺:SiN_x is much higher than that of Tb³⁺:SiO_x. The less oxygen content of the SiN_x film and, more importantly, the faster recombination lifetime of Tb³⁺ ion in SiN_x film are the main reasons. This result shows that SiN_x:Tb³⁺ can be used for silicon-based light emission materials.

• Periodical: Advanced Materials Research (Volume 716)
• Pages: 332-336
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.716.332
• Online since: July 2013
• Authors: Dao Ren Gong, Zhi Zhong Yuan
• Keywords: Ion-Implantation, PECVD, Photoluminescence (PL), Tb

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