Nanocluster NVM Cells Metrology: Window Formation, Relaxation and Charge Retention Measurements

V.A. Ievtukh; A.N. Nazarov; V.I. Turchanikov; V.S. Lysenko

doi:10.4028/www.scientific.net/AMR.718-720.1118

Paper Titles

Test of 32-Channel X-Ray Readout Integrated Circuit
p.1100

A Online System about Tool Observation Based on USB Microscope
p.1104

3D Digitization of Human Body Based on Checkerboard Matching
p.1108

Microwave Digestion - Graphite Furnace Atomic Absorption Spectrometry Determination of Trace Arsenic in the Nano-Titanium Dioxide
p.1113

Nanocluster NVM Cells Metrology: Window Formation, Relaxation and Charge Retention Measurements
p.1118

Remote Sensing Dynamic Monitoring on Illegal Capacity Occupation of Reservoir
p.1124

Development of Pressuremeter Test
p.1129

Quantification of Sulphate in Ambient Aerosols by FTIR Spectroscopy
p.1136

Analysis Methods of Images Surface of Fast Tempered Alloys
p.1140

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 718-720Nanocluster NVM Cells Metrology: Window Formation,...

Nanocluster NVM Cells Metrology: Window Formation, Relaxation and Charge Retention Measurements

Abstract:

In the paper a measurement technique for study main technical and physical parameters of nanocluster non-volatile memory capacitance cell is presented. The charging/discharging process features associated with nanoclusters (nanocrystals) incorporated into gate dielectric are discussed. Original equipment for fast capacitance measurements based on computer interfaces is considers.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 718-720)

Pages:

1118-1123

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.718-720.1118

Citation:

Cite this paper

Online since:

July 2013

Authors:

V.A. Ievtukh, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko

Keywords:

Capacitance Measurements, Charge Relaxation, Information Window, Nanocluster, Non-Volatile Memory (NVM), Retention Time

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe´, K. Chan, A silicon nanocrystals based memory, Appl. Phys. Lett. 68 (1996) 1377-1379.

DOI: 10.1063/1.116085

Google Scholar

[2] A. Thean, J.-P. Leburton, Flash memory: towards single-electronics, IEEE Potentials, 21 (2002) 35-41.

DOI: 10.1109/mp.2002.1044216

Google Scholar

[3] A. Nazarov, V. Turchanikov, Complex nature of charge trapping and retention in NC NVM structures, in: Y. Masuda (Ed.), Nanocrystals, Sciyo, Crotia, 2010, pp.207-230.

Google Scholar

[4] T.-C. Changa, F.-Y. Jiana, S.-C. Chenc, Y.-T. Tsai, Developments in nanocrystal memory, Materials Today, 14 (2011) 608-615.

Google Scholar

[5] E.H. Nicollian and J.R. Brews, MOS Physics and Technology, John Wiley&Sons, New York, 1982.

Google Scholar

[6] E Tsoi, P Normand, A G Nassiopoulou, V Ioannou-Sougleridis, A Salonidou, K Giannakopoulos, Silicon nanocrystal memories by LPCVD of amorphous silicon, followed by solid phase crystallization and thermal oxidation, Journal of Physics: C 10 (2005) 31-35.

DOI: 10.1088/1742-6596/10/1/008

Google Scholar

[7] S.M. Sze, Physics of Semiconductor Devices, second ed., John Wiley&Sons, New York, 1981.

Google Scholar

[8] S.H. Hong, M.C. Kim, P.S. Jeong, S.-H. Choi, K.J. Kim, Ge-nanodot multilayer nonvolatile Memories, Nanotechnology 19 (2008) 305203.

DOI: 10.1088/0957-4484/19/30/305203

Google Scholar

[9] V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, Josep Carreras, B. Garrido, Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2, Microelectronics Reliability 45 (2005) 903–906.

DOI: 10.1016/j.microrel.2004.11.027

Google Scholar

[10] V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, O. Winkler, B. Spangenberg, H. Kurz, Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots, Materials Science and Engineering B124-125 (2005) 517-520.

DOI: 10.1016/j.mseb.2005.08.068

Google Scholar

[11] V. Ievtukh, V. Turchanikov, A. Nazarov, V. Lysenko, P. Normand, P. Dimitrakis, Processes of window formation and dissipation in nanocluster nonvolatilememory structures formed by ultra low energy ion implantation, Europhysics Conference Abstract Volume 32F, ISBN: 2-914771-54-1, 22nd Gen. Conference of the Condensed Matter Division of the European Physical Society, Rome, Italy 25÷29 Aug. 2008.

Google Scholar