Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI

Abstract:

Conventional super-junction lateral double diffused MOSFET (SJ-LDMOS) fabricated on Silicon on Insulator (SOI) substrate suffers from low breakdown voltage under the same on-resistance due to substrate-assisted depletion effect. To suppress this effect, it is important to find the charge density in the inversion layer under buried oxide. In this paper, we propose a charge density equation and its formulation. The results were used in a 3D device simulator to optimize the device structure. The experimental results confirm that the equation is useful to optimize device performance. The breakdown voltage of structure increased 54% and on-state-resistance decreased 58% compared to conventional SJ device. The device fabrication procedure is fully compatible with mainstream SOI CMOS process.

• Periodical: Advanced Materials Research (Volume 721)
• Pages: 521-526
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.721.521
• Online since: July 2013
• Authors: Chao Xia, Xin Hong Cheng, Zhong Jian Wang, Da Wei He, Duo Cao, Ting Ting Jia, Yue Hui Yu, Da Shen Shen
• Keywords: LDMOS, SOI, Substrate-Assisted Depletion Effect, Super-Junction

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