Impact of In Situ NH₃ Plasma Treatments on the Interface between HfLaO_x Thin Film and InP Substrate

Abstract:

In situ NH₃ plasma nitridation was utilized to passivate InP surface, HfLaO_x film was grown by plasma enhanced atom layer deposition method, and the HfLaO_x film remain amorphous after 500°C annealing. High-resolution transmission electron microscopy (HRTEM) images showed that in situ NH₃ plasma nitridation process make the boundary between InP and HfLaO_x smooth and sharp, and could suppress the formation of the interfacial layer. X-ray photoelectron spectra (XPS) results indicated In-N and P-N bonds were formed on the nitride InP surface. The electrical measurements indicated in situ NH₃ plasma nitridation process reduced the hysteresis improved capacitance density and to 7 mV, a sharp transition from depletion to accumulation was observed, the interfacial density states (D_it) of the sample with nitridation was 1.67×10¹² cm² eV¹, and the equivalent oxide thickness (EOT) was 0.6 nm. The leakage current was 1.5 mA/cm² at V_g-V_fb=1V.

• Periodical: Advanced Materials Research (Volume 721)
• Pages: 67-72
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.721.67
• Online since: July 2013
• Authors: Ting Ting Jia, Xin Hong Cheng, Duo Cao, Da Wei Xu, Zhong Jian Wang, Chao Xia, Li Zheng, Yue Hui Yu
• Keywords: InP, Interface, MIS Capacitor, Nanorod, Nitridation, Plasma Enhanced Atomic Layer Deposition

References

[1] I. Osborne, M. Lavine, and R. Coontz, Science 327, (2010) 1600.

[2] M. Lundstrom, Science 299, (2003) 210.

[3] R. Chau, B. Doyle, S. Datta, J. Kavalieros, and K. Zhang, Nature Mater. 6, (2007) 810.

[4] H. Ko, K. Takei, R. Kapadia, S. Chuang, HuiFang, P. W. Leu, K. Ganapathi,E. Plis, H. S. Kim, S.Y. Chen, M. Madsen, A. C. Ford, Y. L., Chueh,S. Krishna, S. Salahuddin, and A. Javey, Nature (London) 468, (2010) 286.

DOI: 10.1038/nature09541

[5] H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. 87, (2005) 182904.

[6] O. Wada and H. Hasegawa, InP-Based Materials and Devices (Wiley, New York, 1999).

[7] A. Mahajan, G. Cueva, M. Arafa, P. Fay, and I. Adesida. IEEE Electron Device. Lett. 18(8), (1997) 391.

DOI: 10.1109/55.605449

[8] Y. Q. Wu, Y. Xuan, P. D. Ye, Z. Cheng, and A. Lochtefeld, in Proceeding of 64th IEEE Device Research Conference, Notre Dame, IN, (2007) 117-118.

[9] H. Zhao, D. Shahrjerdi, F. Zhu, H. -S. Kim, I. Ok, M. Zhang, J. H. Yum, S. K. Banerjee, and J. C. Lee, Electrochem. Solid-State Lett., 11, (2008) H233.

DOI: 10.1149/1.2938728

[10] H. A. Chee, Byun Y.C., M. S. Lee, and H. Kim, J. Electrochem. Soc., 158 (12) (2011) G242.

[11] T. Haimoto, T. Hoshii, S. Nakagawa, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 96, 012107 (2010).

DOI: 10.1063/1.3269906

[12] Y. Shinoda and T. Kobayashi, Solid-State Electron. 25, 1119 (1982).

[13] W. F. Tseng, M. L. Bark, H. B. Dietrich, A. Christou, R. L. Henry, W. A. Schmidt, and N. S. Saks, IEEE Electr. Device Lett. 2, 299 (1981).

DOI: 10.1109/edl.1981.25441

[14] Y. Xiong, H. Tu, J. Du, X. Zhang, D. Chen, and W. Wang, Appl. Phys. Lett. 98, 082906 (2011).

[15] F. Wei, H. L. Tu, and J. Du, J. Phys. D: Appl. Phys. 42, 185301 (2009).

[16] J.G. Oh, Y. Shin, W. C. Shin, O. Sul, and B. J. Cho, Appl. Phys. Lett. 99, 193503 (2011).

[17] R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim et al. Appl. Phys. Lett. 100, (2012) 132906.

[18] A. Talbi, Z. Benamara, B. Akkal, B. Gruzza, L. Bideux, C. Robert, C. Varenne, N. Chami, Materials Science and Engineering A 437 (2006) 254-258.

DOI: 10.1016/j.msea.2006.07.147

[19] T. Akane, K. Sugioka, K. Midorikawa, J. J. Dubowski, N. Aoki and K. Toyoda, J. Appl. Phys., 90, 5851 (2001).

[20] E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).

[21] G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, S. J. Lee, and D. Chi, J. Appl. Phys. 103, 034508 (2008).

[22] S. S. Hullavarad, D. E. Pugel, E. B. Jones, R. D. Vispute, and T. Venkatesan, J. Electron. Mater. 36, 648 (2007).