Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films

Qing Yun Lin; Ping Fan; Jing Ting Luo; Zhuang Hao Zheng; Ying Zhen Li; Miao Qin Zhang; Cong Min Chen

doi:10.4028/www.scientific.net/AMR.734-737.2391

Paper Titles

Structure Studies on Order Assemblage of Nickel^II Complexes
p.2373

The Analysis of the Film Morphology
p.2377

Silver Co-Doping Effect on the Antimony Doped Tin Dioxide Electrode
p.2382

An Experiment Study of the Effect for the Fuel Additive Using in Fishing Vessels Light Diesel Engine Performance
p.2386

Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films
p.2391

Research on Preparation of New Aluminum Silicate Fiber Adiabatic Paper
p.2395

Study on Electrochemical Flotation of Low Rank Coal Macerals
p.2399

Study on Electronic and Optical Properties of Al-Doped ZnS from Density Function Theory
p.2405

Study on Supercapacity Properties of Manganese Dioxide Active Material by the Cation Concentration Change on the Electrode Surface
p.2411

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 734-737Influence of Ti-Doping on the Thermoelectric...

Influence of Ti-Doping on the Thermoelectric Properties of ZnO:Al Thin Films

Abstract:

Ti doped aluminum zinc oxide thin film was prepared by DC reaction magnetron sputtering method on the transparent glass substrates. The structure and thermoelectric performance of the deposited (TAZO) thin films are studied by various methods. XRD pattern shows that the TAZO thin film exhibits hexagonal wurtzite structure. After Ti-doping, the thermoelectric properties of TAZO thin film significantly improved at room temperature. The TAZO thin film has the maximum conductivity of 8.33×10⁴ S/m and the Seebeck coefficient absolute value of 34 μV/K, which is respectively larger than that of the corresponding values.