Paper Title:
Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser
  Abstract

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.

  Info
Periodical
Chapter
Chapter 2: Applied Materials Engineering
Edited by
Wen Jin
Pages
197-202
DOI
10.4028/www.scientific.net/AMR.746.197
Citation
W.J. Fan, "Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser", Advanced Materials Research, Vol. 746, pp. 197-202, 2013
Online since
August 2013
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