Theory of Direct-Transition Optical Gain in a Novel n+ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

W.J. Fan

doi:10.4028/www.scientific.net/AMR.746.197

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Theory of Direct-Transition Optical Gain in a Novel n⁺ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 746Theory of Direct-Transition Optical Gain in a...

Theory of Direct-Transition Optical Gain in a Novel n⁺ Doping Tensile-Strained Ge/GeSiSn-on-Si Quantum well Laser

Abstract:

The band structure and optical gain of a novel n⁺ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.