The Magnetisc Study of the ZnO Thin Film with Defects

Zhi Huan Lan; Hui Feng Zhang; Chun Yan Tian

doi:10.4028/www.scientific.net/AMR.750-752.1871

Paper Titles

Study on Gasoline Combustion Dust with ASE and HPLC
p.1852

Kinetics of Mesophase Sphere Formation of Toluene Soluble Fraction
p.1855

Determination of Inductive Ignition Period and Activation Energy of Food Dust
p.1860

Characterization of TiO₂/ACF Preparation in Caprolactam Tetrabutyl Ammonium Bromide Ionic Liquid
p.1864

The Magnetisc Study of the ZnO Thin Film with Defects
p.1871

Kinetic Monte Carlo Simulation of Surfactant-Mediated Thin Film Growth
p.1875

Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film
p.1879

Effect of H₂ on Microstructures and Properties of AlN Films Deposited by Reactive Magnetron Sputtering
p.1883

Surface Modification of Parylene C Film and Application
p.1887

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The Magnetisc Study of the ZnO Thin Film with Defects

Abstract:

The electronic structures of ZnO were calculated by using a accurate full-potential linerized plane-wave and supercell method. To research on the influence of the intrinsic defects such as O vacancies and Zn vacancies on the magnetism of ZnO thin film, we built 2x2x2 supercells of ZnO, Zn₁₆O₁₅ and Zn₁₅O₁₆_. The results indicate that the pure ZnO and ZnO with O vacancies are non-magnetic, but ZnO with Zn acancies is magnetic. The magnetism originates from the spin-polarized O atoms around the Zn vacancy. We can draw a conclusion that Zn vacancies are the origin of magnetism in ZnO films.