Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film

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Abstract:

Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.

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Periodical:

Advanced Materials Research (Volumes 750-752)

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1879-1882

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August 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] H. Xu, C. Liu, V.V. Silberschmidt, et al: Materials Processing Technology. Vol. 210 (2010), pp.1035-1042.

Google Scholar

[2] H. Xu, C. Liu, V.V. Silberschmidt, et. al: Intermetallics. Vol. 19 (2011) pp.1808-1816.

Google Scholar

[3] S. Murali, N. Srikanth, Charles J. Vath III: Materials Letters. Vol. 58 (2004) pp.3096-3101.

Google Scholar

[4] Y. Funamizu, K. Watanabe: Trans. JIM. Vol. 12 (1971) pp.147-152.

Google Scholar

[5] F. W. Wulff, C. D. Breach, D. Stephan, et al: Electronics Packaging Technology Conference (2004) pp.348-353.

Google Scholar

[6] M. Braunovic, N. Aleksandroc: IEEE Trans. (1993) pp.261-268.

Google Scholar

[7] Li JunHui, Liu LingGang, Deng LuHua, et al: Electron device letters. Vol. 32 (2011) pp.1433-1435.

Google Scholar