Two Temperature Model Numerical Simulation and Analysis of Thermal Transport Process in Copper Film

Abstract:

Thermal transport process in copper film was numerically simulated with Two-Temperature Model, in which finite difference method was used, and the result shown the temperature change process in electron-lattice system. Some parameters were changed to carry on further simulation. The affect of film thickness on the electronic relaxation time was analyzed. The affect of pump laser beam power on the electron temperature rise was discussed. The influence of electron-lattice coupling factor G on non-equilibrium thermal process was shown in simulations.

• Periodical: Advanced Materials Research (Volumes 750-752)
• Pages: 2271-2274
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.750-752.2271
• Online since: August 2013
• Authors: Fan Da Zeng*, Ya Ping Han, Jin Xin Wang, Shao Ze Wang
• Keywords: Coupling Factor G, Film Thickness, Finite Difference Method (FDM), Power of Pump Laser Beam, Thermal Transport Process, Two-Temperature Model

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