Preparation of Ni-Mn-Zn Ferrite Films on CeO2/YSZ-Buffered Si Substrate

Yi Qing Yang; Liang Zheng; Hui Zheng; Xue Fei Yan

doi:10.4028/www.scientific.net/AMR.756-759.21

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 756-759Preparation of Ni-Mn-Zn Ferrite Films on...

Preparation of Ni-Mn-Zn Ferrite Films on CeO₂/YSZ-Buffered Si Substrate

Abstract:

Ni-Mn-Zn ferrite films were deposited on Si substrate with CeO2/YSZ(YSZ:yttria-stabilized ZrO2) buffer layer by pulsed laser deposition (PLD). The effect of CeO2/YSZ buffer layer on the Ni-Mn-Zn ferrite film was studied by XRD, SEM and VSM. The results revealed that the CeO2/YSZ buffer layer can improve the films crystallinity, smooth the roughness of film, reduce the film crack and lead to a homogeneous microstructure. The saturation magnetization (Ms) higher than 240 emu/cm3 can be obtained. It also found annealing process can improve the film crystallinity and the magnetic properties, decrease the coercivity (Hc).

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Advanced Materials Research (Volumes 756-759)

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21-24

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https://doi.org/10.4028/www.scientific.net/AMR.756-759.21

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Online since:

September 2013

Authors:

Yi Qing Yang, Liang Zheng, Hui Zheng, Xue Fei Yan

Keywords:

CeO2/YSZ Buffer, Ferrite, Pulsed Laser Deposition

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