A Novel 2-GS/s 12-Bit DAC in SiGe HBT Technology

Yu Jun Yang; Rong Bin Hu; Jia Chen

doi:10.4028/www.scientific.net/AMR.756-759.4283

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 756-759A Novel 2-GS/s 12-Bit DAC in SiGe HBT Technology

A Novel 2-GS/s 12-Bit DAC in SiGe HBT Technology

Abstract:

In this paper, a 12-bits DAC in 0.18um SiGe HBT process is presented. The DAC consists of a 4:1 MUX, standard input interfaces and LVDS output. The DAC consumes 1.8W power under a 3.3V power supply. The simulation results show that the SFDR of the DAC is 81dB, and the converter can be operated at a sampling rate up to 2GSPS.

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Periodical:

Advanced Materials Research (Volumes 756-759)

Pages:

4283-4286

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.756-759.4283

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Online since:

September 2013

Authors:

Yu Jun Yang, Rong Bin Hu, Jia Chen

Keywords:

Current-Steering, Digital-to-Analog Converter (DAC), Heterojunction Bipolar Transistor (HBT), R-2R

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