A Novel Single Step Thinning Process for Extremely Thin Si Wafers

Y.B. Tian; Li Bo Zhou; Jun Shimizu; H. Sato; Ren Ke Kang

doi:10.4028/www.scientific.net/AMR.76-78.434

Paper Titles

Analysis of Fixed Abrasive Pads with a Nano-Sized Diamond for Silicon Wafer Polishing
p.410

Laser Micromachining of Silicon Substrates
p.416

Chip Size Estimation for Effective Blending Ratio of Slurries in Wire Sawing of Silicon Wafers for Solar Cells
p.422

Effects of Sodium Carbonate and Ceria Concentration on Chemo-Mechanical Grinding of Single Crystal Si Wafer
p.428

A Novel Single Step Thinning Process for Extremely Thin Si Wafers
p.434

Blasting of Affected Layer of Silicon Surface Sliced by Wire EDM
p.440

Modeling and Analysis of Effects of Machine Tool Stiffness and Cutting Path Density on Infeed Surface Grinding of Silicon Wafer
p.445

Processing Grinding-Damaged Silicon Wafers by High-Frequency Nano-Second Laser Irradiation
p.451

Measuring Surface Uniformity in Chemical Mechanical Polishing
p.459

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 76-78A Novel Single Step Thinning Process for Extremely...

A Novel Single Step Thinning Process for Extremely Thin Si Wafers

Abstract:

The demand for extremely-thin Si wafers is expanding. Current manufacturing technologies are meeting great challenges with the continuous decrease in Si wafer thickness. In this study, a novel single step thinning process for extremely thin Si wafers was put forward by use of an integrated cup grinding wheel (ICGW) in which diamond segments and chemo-mechanical grinding (CMG) segments are alternately allocated along the wheel periphery. The basic machining principle and key technologies were introduced in detail. Grinding experiments were performed on 8-in. Si wafers with a developed ICGW to explore the minimal wafer thickness and grinding performance. The experimental results indicate that the proposed grinding process with the ICGW is an available thinning approach for extremely thin Si wafer down to 15μm