Blasting of Affected Layer of Silicon Surface Sliced by Wire EDM

Hirofumi Hidai; Taro Sugita; Hitoshi Tokura

doi:10.4028/www.scientific.net/AMR.76-78.440

Paper Titles

Laser Micromachining of Silicon Substrates
p.416

Chip Size Estimation for Effective Blending Ratio of Slurries in Wire Sawing of Silicon Wafers for Solar Cells
p.422

Effects of Sodium Carbonate and Ceria Concentration on Chemo-Mechanical Grinding of Single Crystal Si Wafer
p.428

A Novel Single Step Thinning Process for Extremely Thin Si Wafers
p.434

Blasting of Affected Layer of Silicon Surface Sliced by Wire EDM
p.440

Modeling and Analysis of Effects of Machine Tool Stiffness and Cutting Path Density on Infeed Surface Grinding of Silicon Wafer
p.445

Processing Grinding-Damaged Silicon Wafers by High-Frequency Nano-Second Laser Irradiation
p.451

Measuring Surface Uniformity in Chemical Mechanical Polishing
p.459

Abrasive Surfaces Measured by Digital Optical Stereopsis
p.465

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 76-78Blasting of Affected Layer of Silicon Surface...

Blasting of Affected Layer of Silicon Surface Sliced by Wire EDM

Abstract:

Polycrystalline ingot slicing by wire electric discharge machining (W-EDM) has been investigated to reduce kerf loss and wafer thickness. In order to use the sliced wafers for semiconductor devices, the modified surface layer induced by W-EDM must be removed. In this paper, we have demonstrated the elimination of the layer by abrasive blasting. Three types of abrasives were blasted at a speed of 100 m/s. The surfaces blasted with WA #1000 and GC #1000 were smoother than that sliced with a wire saw. The modified layer induced by W-EDM slicing could be removed by blasting with WA #1000 while scanning the surface three times. Solar cells were fabricated using wafers with the blasted surface with an efficiency of 15.2%, which was almost the same as that of cells fabricated from the wire-sliced wafers.

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Periodical:

Advanced Materials Research (Volumes 76-78)

Pages:

440-444

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.76-78.440

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Online since:

June 2009

Authors:

Hirofumi Hidai, Taro Sugita, Hitoshi Tokura

Keywords:

Abrasive Blast, Modified Layer Removal, Polycrystalline Silicon, Solar Cell

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References

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