A 10-Gb/s 0.18-μm CMOS Optical Receiver Front-End Amplifier

Wen Yuan Li; Rui Guo

doi:10.4028/www.scientific.net/AMR.760-762.115

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 760-762A 10-Gb/s 0.18-μm CMOS Optical Receiver Front-End...

A 10-Gb/s 0.18-μm CMOS Optical Receiver Front-End Amplifier

Abstract:

A fully integrated 10-Gb/s optical receiver analog front-end (AFE) design that includes a transimpedance amplifier (TIA) and a limiting amplifier (LA) is demonstrated to require less chip area and is suitable for both low-cost and low-voltage applications. The AFE is stimulation using a 0.18μm CMOS process. In order to avoid off-chip noise interference, the TIA and LA are dc-coupled on the chip instead of ac-coupled though a large external capacitor. The tiny photo current received by the receiver AFE is amplified to voltage swing of 400. The results indicate that, with a photodiode parasitic capacitance of 500fF and the bonding pad parasitic capacitance of 200fF between which a 2-mm bond wire is inserted at the input node, the AFE provides a conversion gain of up to 89.21 dB and 3 dB bandwidth of 9.78 GHz. Operating under a 1.8V supply, circuit power dissipation is 95 mW and its sensitivity is 18.5μA for BER of 10^-12

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Periodical:

Advanced Materials Research (Volumes 760-762)

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115-119

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https://doi.org/10.4028/www.scientific.net/AMR.760-762.115

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Online since:

September 2013

Authors:

Wen Yuan Li, Rui Guo

Keywords:

Feed-Forward Common Gate Transimpedance Amplifier, Front-End Amplifier Limiting Amplifier, Optical Receiver

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