Investigation on the Solution-Based Metal-Oxide Semiconductor Film and its Properties

Juan Li; Ming  Yang; Shao Zhen  Xiong

doi:10.4028/www.scientific.net/AMR.760-762.709

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Preparation and Properties of CCTO-BCTO Ceramics with Ultrahigh Dielectric Constant
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Investigation on the Solution-Based Metal-Oxide Semiconductor Film and its Properties
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 760-762Investigation on the Solution-Based Metal-Oxide...

Investigation on the Solution-Based Metal-Oxide Semiconductor Film and its Properties

Abstract:

In this paper, the ZrInZnO thin film has been prepared by solution method. The influence of heat treatment conditions on film properties has been analyzed. With the treatment temperature and time increase, the Hall mobility and square resistance of the film were increased and reduced respectively. In addition, we analyzed the role of heavy metal Zr on oxygen vacancies in the semiconductor oxide combined with heat treatment results and the chemical reaction process. It has been found that heavy metal Zr has binding effect on oxygen, it effectively inhibits the generation of oxygen vacancies, thereby reducing the number of oxygen vacancies, but at the same time causing certain binding effect to carriers.