Influence of Titanium Ion Doped Amount on the Dielectric Property of BMNT Ceramics

Xin You Huang; Yuan Zuo; Chun Hua Gao

doi:10.4028/www.scientific.net/AMR.760-762.772

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 760-762Influence of Titanium Ion Doped Amount on the...

Influence of Titanium Ion Doped Amount on the Dielectric Property of BMNT Ceramics

Abstract:

Bi₂(Mg_l/3Nb_2/3-xTi_x)₂O₇(BMNT)(x=0.1, 0.15, 0.2, 0.25) ceramics was prepared by conventional solid phase method, The influence of titanium ion doped amount on the dielectric property and microstructure of BMNT ceramics were systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and other testing and analysis how to methods. Results show that there is single monoclinic pyrochlore phase and there is not the second phase in all BMNT ceramics doped with titanium ion. The grain size of BMNT ceramics increases first and then decreases, the dielectric constant (ε_r) increases first and then decreases, the dielectric loss (tanδ) increases first and then decreases, the ceramic density decreases all the time while titanium ion doped amount increases. The ceramic density increases first and then decreases when sintered temperature increases. The density of BMNT ceramics doped with titanium ion is biggest when sintered temperature is 980 °C. When sintered temperature is 980 °C and titanium ion doped amount is 0.15mol, the dielectric properties of BMNT ceramics is good,which ε_r is 135(1MHz), tanδ is 0.002(1MHz) and volume density is 7.46g/cm³.

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Periodical:

Advanced Materials Research (Volumes 760-762)

Pages:

772-775

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.760-762.772

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Online since:

September 2013

Authors:

Xin You Huang, Yuan Zuo, Chun Hua Gao

Keywords:

Bi₂ (Mg_1/3Nb_2/3)₂ O₇, Ceramic, Dielectric Property, High-Frequency, Titanium Ion Doped

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