Al Vacancy Induced Room-Temperature Ferromagnetic in Un-Doped AlN

Abstract:

Room-temperature ferromagnetism has been found in AlN grown by direct arc discharge method using the direct reaction of Al powder with N₂ gas. The observed room-temperature ferromagnetism which arises from the aluminum vacancy is intrinsic properties in AlN. The results could rule out oxygen impurities as the main cause of magnetic origin in AlN. First-principles calculations reveal that spontaneous spin polarization creates with a 3.0 u_B local moment for AlN and magnetic originate from the polarization of the unpaired 2p electrons of N surrounding the Al vacancy. The aluminum vacancy induced may be applicable to other Ш-V nitride semiconductors in turning their magnetism.

• Periodical: Advanced Materials Research (Volume 772)
• Pages: 57-61
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.772.57
• Online since: September 2013
• Authors: Hui Hui Ren, Rong Wu, Ji Kang Jian, Chu Chen, Abduleziz Ablat
• Keywords: Al Vacancy, Aluminum Nitride (AlN), Direct Arc Discharge, Ferromagnetic

References

[1] H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye. Appl. Phys. Lett. Vol. 69 (1996), p.363.

DOI: 10.1063/1.118061

[2] K. Ueda, H. Tabata, and T. Kawai. Appl. Phys. Lett. Vol. 79 (2001), p.988.

[3] S. A. Chambers, S. Thevuthasan, R. F. C. Farrow, R. F. Marks, and J. U. Appl. Phys. Lett. Vol. 79 (2001), p.3467.

[4] H. Li, H.Q. Bao, B. Song, W.J. Wang, X.L. Chen, Solid State Commun. Vol. 148 (2008), p.406.

[5] X.H. Ji, S.P. Lau, S.F. Yu, H.Y. Yang, T.S. Herng, A. Sedhain, J.Y. Lin, H.X. Jiang, K.S. Teng, and J.S. Chen, Appl. Phys. Lett. Vol. 90 (2007), p.193118.

DOI: 10.1063/1.2738370

[6] M. K. Li, C.B. Li, C.S. Liu, X.J. Fan, D.J. Fu, Y. Shon, and T.W. Kang, Chin. Phys. Lett. Vol. 21 (2004), p.393.

[7] X. H. Ji, S.P. Lau, S.F. Yu, H.Y. Yang, T.S. Herng, and J.S. Chen, Nanotechnology, Vol. 18 (2007), p.105601.

[8] E. Tirosh and G. Markovich, Adv. Mater. Vol. 19 (2007), p.2608.

[9] N. H. Hong, N. Poirot, and J. Sakai, Phys. Rev. B. Vol. 77 (2008), p.033205.

[10] D. Pratibha, X. Yu, and P. H. Zhang. Phys. Rev. Lett. Vol. 100 (2008), p.117204.

[11] W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou, J. Phys. Chem. C. Vol. 114 (2010), p.15574.

[12] W. W. Lei, D. Liu, P. W. Zhu, X. H. Chen, Q. Zhao, G. H. Wen, Q. L. Cui, and G. T. Zou. Appl. Phys. Lett. Vol. 95 (2009), p.162501.

[13] Jussi-matti maki. Influence of vacancy defects on the optical properties of natural diamond and aluminium nitride. Aalto university publication series. School of science department of applied physics. Doctoral dissertations. (2012).

[14] C. Stampfl and C. Van de Walle, Phys. Rev. B Vol. 65 (2002), p.155212.

[15] Y. Zhang, W. Liu, and H.B. Niu, Phys. Rev. B Vol. 77 (2008), p.035201.

[16] RobertA. Youngman. and Jonathan H. Harris. J Am Cerom Soc Vol. 73 (1990), p.3238.

[17] Pratibha. Dev, Yu. Xue, and Peihong. Zhan, Phys. Rev. Lett. Vol. 100 (2008), p.117204.

[18] J.P. Perdew and Y. Wang, Phys. Rev. B. Vol. 45 (1992), p.13244.