First-Principles Investigation of N-Al Co-Doping Effect on ZnMgO Wide-Gap Semiconductor

Abstract:

We report first principles studies of p-type doping properties of ZnMgO wide-gap semiconductor alloy. The band gaps of ZnMgO and doped ZnMgO are found to be controllable, and hence one can tailor the band gap of ZnMgO or doped ZnMgO to design devices by controlling Mg composition. According to defect formation energies analysis, the solid solubility of acceptor in ZnMgO can be improved by co-doping technology. The acceptor level of N becomes shallower by Al-N co-doping in ZnMgO, hence the hole concentration is enhanced. Combining the results of defect formation energies and acceptor level of N, we can draw the conclusion that p-type doping can be easier realized by Al-N co-doping in ZnMgO than in ZnO.

• Periodical: Advanced Materials Research (Volume 773)
• Pages: 253-258
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.773.253
• Online since: September 2013
• Authors: Guo Ying Zhang, Gui Li Liu, Hui Zhang
• Keywords: Co-Doping, First-Principle, ZnMgO

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